agilent MSA-0670 cascadable silicon bipolar mmic amplifier data sheet features ? cascadable 50 ? gain block ? low operating voltage: 3.5 v typical v d ? 3 db bandwidth: dc to 1.0 ghz ? high gain: 19.5 db typical at 0.5 ghz ? low noise figure: 2.8 db typical at 0.5 ghz ? hermetic gold-ceramic microstrip package 70 mil package typical biasing configuration c block c block r bias v cc > 5 v v d = 3.5 v rfc (optional) in out msa 4 1 2 3 description the MSA-0670 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a hermetic, high reliability package. this mmic is designed for use as a general purpose 50 ? gain block. typical applications include narrow and broad band if and rf amplifiers in industrial and military applications. the msa-series is fabricated using agilent s 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility.
2 MSA-0670 absolute maximum ratings parameter absolute maximum [1] device current 50 ma power dissipation [2,3] 200 mw rf input power +13 dbm junction temperature 200 c storage temperature C 65 to 200 c thermal resistance [2,4] : jc = 130 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 7.7 mw/ c for t c > 174 c. 4. the small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 19.0 20.5 22.0 ? g p gain flatness f = 0.1 to 0.6 ghz db 0.7 1.0 f 3 db 3 db bandwidth ghz 1.0 input vswr f = 0.1 to 1.5 ghz 1.9:1 output vswr f = 0.1 to 1.5 ghz 1.8:1 nf 50 ? noise figure f = 0.5 ghz db 2.8 4.0 p 1 db output power at 1 db gain compression f = 0.5 ghz dbm 2.0 ip 3 third order intercept point f = 0.5 ghz dbm 14.5 t d group delay f = 0.5 ghz psec 200 v d device voltage v 3.1 3.5 3.9 dv/dt device voltage temperature coefficient mv/ c C 8.0 note: 1. the recommended operating current range for this device is 12 to 30 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 16 ma, z o = 50 ? units min. typ. max. vswr
3 MSA-0670 typical scattering parameters (z o = 50 ? , t a = 25 c, i d = 16 ma) freq. ghz mag ang db mag ang db mag ang mag ang k 0.1 .05 C 147 20.5 10.62 172 C 23.3 .068 4 .05 C 69 1.05 0.2 .07 C 134 20.4 10.41 164 C 23.0 .070 8 .09 C 92 1.04 0.3 .09 C 126 20.1 10.16 156 C 22.6 .074 12 .13 C 104 1.02 0.4 .11 C 123 19.9 9.85 148 C 22.4 .076 14 .16 C 113 1.00 0.5 .13 C 123 19.6 9.50 141 C 22.0 .079 26 .20 C 121 0.99 0.6 .15 C 123 19.2 9.09 135 C 21.3 .082 18 .22 C 128 0.97 0.8 .19 C 126 17.4 8.28 122 C 20.7 .093 22 .25 C 141 0.94 1.0 .24 C 129 16.5 7.46 110 C 19.8 .103 22 .27 C 154 0.92 1.5 .31 C 141 15.2 5.76 87 C 18.2 .124 23 .27 C 176 0.91 2.0 .38 C 157 13.0 4.47 68 C 17.2 .138 19 .24 166 0.94 2.5 .42 C 167 11.1 3.59 57 C 16.7 .146 20 .21 158 1.01 3.0 .46 178 9.5 2.97 45 C 16.4 .152 16 .17 156 1.07 3.5 .48 173 7.9 2.49 33 C 16.2 .155 11 .14 163 1.15 4.0 .48 164 6.6 2.13 22 C 16.1 .156 9 .11 C 175 1.27 4.5 .48 155 5.5 1.87 13 C 15.9 .161 5 .11 C 154 1.35 5.0 .48 143 4.5 1.67 3 C 15.8 .163 3 .14 C 141 1.46 s 11 s 21 s 12 s 22 g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, t a = 25 c, i d = 16 ma. 1 02345 v d (v) figure 2. device current vs. voltage. figure 3. power gain vs. current. 0 3 6 9 12 15 18 21 0 5 10 15 20 25 gain flat to dc i d (ma) t c = +125 c t c = +25 c t c = ?5 c i d (ma) 0 5 10 15 20 25 g p (db) 10 20 25 30 15 0.1 ghz 0.5 ghz 1.0 ghz 2.0 ghz 0 1 2 3 4 5 0 1 2 3 4 5 17 18 19 20 21 ?5 ?5 +25 +85 +125 p 1 db (dbm) nf (db) gp (db) temperature ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 0.5 ghz, i d =16ma. p 1 db nf g p 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. -4 0 4 8 12 p 1 db (dbm) i d = 20 ma i d = 30 ma i d = 12 ma i d = 16 ma 2.5 2.0 3.0 3.5 4.0 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 4.0 i d = 12 ma i d = 16 ma, 30 ma i d = 20 ma typical performance, t a = 25 c (unless otherwise noted)
70 mil package dimensions 1 3 4 2 ground ground rf output and bias rf input .020 .508 .070 1.78 .495 .030 12.57 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .040 1.02 .035 .89 .004 .002 .10 .05 www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (65) 6756 2394 india, australia, new zealand: (65) 6755 1939 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (65) 6755 2044 taiwan: (65) 6755 1843 data subject to change. copyright ? 2005 agilent technologies, inc. obsoletes 5966-4949e april 4, 2005 5989-2763en ordering information part numbers no. of devices comments MSA-0670 10 bulk
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